cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 1/9 mtdp9933kq8 cystek product specification dual p-channel enhancement mode power mosfet mtdp9933kq8 bv dss -20v i d @v gs =-4.5v, t a =25 c -4.5a i d @v gs =-4.5v, t c =25 c -7.5a features r dson @v gs =-4.5v, i d =-4a 28 m (typ) ? simple drive requirement r dson @v gs =-2.5v, i d =-4a 36 m (typ) ? low on-resistance r dson @v gs =-1.8v, i d =-2a 44 m (typ) ? fast switching speed ? pb-free lead plating and halogen-free package ? esd protected device equivalent circuit outline ordering information device package shipping MTDP9933KQ8-0-T3-G sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel mtdp9933kq8 sop-8 g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 2/9 mtdp9933kq8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol 10s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current @ t c =25 c, v gs =-4.5v (note1) -7.5 continuous drain current @ t c =100 c, v gs =-4.5v (note1) i d -4.7 continuous drain current @ t a =25 c, v gs =-4.5v (note2) -6.0 -4.5 continuous drain current @ t a =70 c, v gs =-4.5v (note2) i dsm -4.8 -3.6 pulsed drain current (note3) i dm -40 *1,2 a t c =25 w (note1) 3.1 t c =100w (note1) p d 1.2 t a =25 c (note2) 2.0 1.1 total power dissipation t a =70 c (note2) p dsm 1.3 0.7 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol typical maximum unit thermal resistance, junction-to-case r th,j-c 34 40 t 10s 58 62.5 thermal resistance, junction-to-ambient (note2) steady state r th,j-a 91 110 c/w note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user?s specific board design. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. electrical characteristics (tc=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -20 - - v gs =0v, i d =-250 a v gs(th) -0.3 - -0.9 v v ds =v gs , i d =-250 a i gss - - 10 v gs =8v, v ds =0v i dss - - -1 v ds =-20v, v gs =0v i dss - - -5 a v ds =-20v, v gs =0, tj=55 c - 28 38 i d =-4a, v gs =-4.5v - 36 48 i d =-4a, v gs =-2.5v r ds(on) (note 1) - 44 62 m i d =-2a, v gs =-1.8v g fs (note 1) - 30 - s v ds =-5v, i d =-3a
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 3/9 mtdp9933kq8 cystek product specification dynamic ciss - 828 1242 coss - 134 201 crss - 127 191 pf v ds =-10v, v gs =0, f=1mhz t d(on) (note 1&2) - 4.2 6.3 t r (note 1&2) - 23.6 35.4 t d(off) (note 1&2) - 54.6 81.9 t f (note 1&2) - 28.8 43.2 ns v ds =-5v, i d =-0.5a, v gs =-4.5v, r g =6 qg (note 1&2) - 10.6 15.9 qgs (note 1&2) - 1.2 - qgd (note 1&2) - 3.9 - nc v ds =-10v, i d =-3.8a, v gs =-4.5v rg - 5.8 - f=1mhz source-drain diode i s - - -1.7 i sm (note 3) - - -10 a v sd (note 1) - -0.76 -1 v i s =-1a, v gs =0v trr - 22.3 - ns qrr - 4.4 - nc i f =-1.3a, di f /dt=100a/ s note : 1.pulse test : pulse width 300 s, duty cycle 2% 2.independent of operating temperature 3.pulse width limited by maximum junction temperature recommended soldering footprint
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 4/9 mtdp9933kq8 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v -v ds , drain-source voltage(v) -i d , drain current(a) -v gs =2.5v 10v,9v,8v,7v,6v,5v,4v,3v -v gs =2v -v gs =1.5v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-1.8v v gs =-2.5v v gs =-3v v gs =-4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 240 280 320 360 400 024681 0 0 tj=25c tj=150c v gs =0v drain-source on-state resistance vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-4a r ds( on) @tj=25c : 28mtyp. -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-4a
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 5/9 mtdp9933kq8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250ua id=-1ma maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 1s 100 s r dson limited t a =25c, tj=150c v gs =-4.5v, r ja =62.5c/w single pulse gate charge characteristics 0 1 2 3 4 5 024681012 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-3.8a maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja =62.5c/w forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-5v pulsed ta=25c
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 6/9 mtdp9933kq8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 35 40 0123 4 single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =62.5c/w v ds =-5v -v gs , gate-source voltage(v) -i d , drain current(a) transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5c/w
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 7/9 mtdp9933kq8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 8/9 mtdp9933kq8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c589q8 issued date : 2015.02.24 revised date : page no. : 9/9 mtdp9933kq8 cystek product specification sop-8 dimension marking: *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1850 0.2007 4.70 5.10 g 0.0531 0.0689 1.35 1.75 b 0.1496 0.1575 3.80 4.00 h 0.1889 0.2007 4.80 5.10 c 0.2283 0.2441 5.80 6.20 i 0.0019 0.0098 0.05 0.25 d 0.0500* 1.27 * j 0.0157 0.0500 0.40 1.27 e 0.0130 0.0201 0.33 0.51 k 0.0067 0.0098 0.17 0.25 f 0.1472 0.1527 3.74 3.88 l 0.0531 0.0610 1.35 1.55 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 8-lead sop-8 plastic package cystek packa g e code: q8 date code dp 9933k device name
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